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86

R. Jaisutti, J. Kim, S. K. Park, and Y. H. Kim, “Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors”, ACS Appl. Mater. Interfaces, 8, 20192-20199 (2016)

85

J. Kim, J. Kim, K. T. Kim, Y. H. Kim, and S. K. Park, “Monolithic Integration and Design of Solution-Processed Metal?Oxide Circuitry in Organic Photosensor Arrays”,  IEEE Electron Device Letters, 37, 5, 671-673 (2016)

84

J. Kim, J. Kim, S. Jo, J. Kang, J. W. Jo, M. Lee, J. Moon, L. Yang, M. G. Kim, Y. H. Kim, and S. K. Park, “Ultrahigh Detective Heterogeneous Photosensor Arrays with In-Pixel Signal Boosting Capability for Large-Area and Skin-Compatible Electronics”, Advanced Materials, 28, 3078-3086 (2016)

83

J. S. Heo, J. W. Jo, J. Kang, C. Y. Jeong, H. Y. Jeong, S. K. Kim, K. Kim, H. I. Kwon, J. Kim, Y. H. Kim, M. G. Kim, and S. K. Park, “Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors”, ACS Appl. Mater. Interfaces, 8, 10403-10412 (2016)

82

C. J. Park, J. S. Heo, K. T. Kim, G. Yi, J. Kang, J. S. Park, Y. H. Kim, and S. K. Park, “1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles”, RSC Advances, 6, 18596-18600 (2016)

81

W. Lee, S. Choi, K. T. Kim, J. Kang, S. K. Park, and Y. H. Kim, “Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy”, Materials, 9, 6, doi:10.3390 (2016)

 

80

W. Byun, S. Choi, S. K. Park, and Y. H. Kim, “Synthesis of High Aspect-Ratio Copper Nanowires for One-Dimensional Fillers in Conductive Fibers”, J. Nanosci. Nanotechnol., 16, 11, 11377-11380 (2016)

79

B. D. Choi, H. S. Kim, Y. G. Ha, J. An, K. Ahn, J. Jong, S. K. Park, and M. G. Kim, “Solution-Processed Amorphous Zn-In-SnO/ZrO2 Based Field-Effect Transistors”, J.  Nanosci. Nanotechnol., 16, 11, 11406-11412 (2016)

78

J. S. Heo, K. T. Kim, Y. H. Kim, and S. K. Park, “Low-Voltage Driven Reflective-type Flexible Display Devices with Micro-Structured Inner Reflectors and Pillar-Shaped  Spacers”, J. Nanosci. Nanotechnol., 16, 11, 11372-11376 (2016)

77

S. Park, K.-H. Kim, J.-W. Jo, S. Sung, K.-T. Kim, W.-J. Lee, J. K. Kim, J. Kim, H. J. Kim, Y.-Y. Noh, G.-R. Yi, Y.-H. Kim, M.-H. Yoon, and S. K. Park, “In-Depth Studies on Rapid Photochemical Activation of Various Sol-Gel Metal Oxide Films for Flexible Transparent Electronics”, Advanced Functional Materials, 25, 2807-2815 (2015)

76

J. K. Kim, M. G. Kim, S. Jo, J. Kang, J. Kim, J.-W. Jo, W. Lee, C. Hwang, J. Moon, L.Yang, Y. -H. Kim, Y.-Y. Noh, J. Y. Jaung, Y.-H. Kim, and S. K. Park “Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics”, Scientific Reports, 5, 14520 (2015)

75

J. Kim, C. J. Park, G. Yi, M. ?S. Choi, and S. K. Park, Low-Temperature Solution-  Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors, Materials, 8, 6926-6934 (2015)

74

J. Kim, J. Kang, H. H Park, and S. K. Park, “Correlations Between Field-Effect Mobility and Gate Dielectric Materials in Solution-Processed Metal-Oxide Transistors”, Journal of Nanoelectronics and Optoelectronics, 10, 3, 361-365 (2015)

73

W. Lee, M. Lee, G. M. Yi, S. K. Park, and Y. H Kim, “Photo-Activated Indium- Strontium-Zinc-Oxide Thin-Film Transistors Using a Strontium Nitrate Precursor”, Journal of Nanoelectronics and Optoelectronics, 10, 366-370 (2015)

72

J. K. Kim, H. H. Park, Y.-H. Kim, and S. K. Park, “Effect of prebake temperature on the performance of photochemically-annealed IGZO thin-film transistors”, Sci. Adv. Mater. 7, 8, 1525-1529 (2015)

71

J. Eom, S. Choi, J. Y. Jaung, S. K. Park, and Y. H. Kim, “The Effects of Dry Ar Plasma Treatment on the Optical and Electrical Properties of Transparent Silver Nanowire Electrodes”, Sci. Adv. Mater. 7, 8, 1520-1524 (2015)

70

I. Jang, J. Kim, C. Ippen, T. Greco, M. S. Oh, J. Lee, W. K. Kim, A. Wedel, C. Jong Han, and S. K. Park, “Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emiting diodes”, Electron Materials Letters, 11,6, 1066-1071 (2015)

69

J.-S. Heo, J.-H. Kim, J. K. Kim, M.-G. Kim, Y.-H. Kim, and S. K. Park, Photochemically Activated Flexible Metal-Oxide Transparent and Circuits using Low Impurity Aqueous System IEEE Electron Device Letters, 2, 162-164, (2015)

68

J.-W Jo, J. K. Kim, K.-T. Kim, J.-G. Kang, M.-G. Kim, K.-H. Kim, H. Ko, Y.-H. Kim, and S. K. Park, “Highly stable and imperceptible electronics utilizing photo-activated heterogeneous sol-gel metal-oxide dielectrics and semiconductors”, Advanced Materials, 27, 1182 (2015)

67

I. Jang, J. Kim, C. Ippen, T. Greco, M. S. Oh, J. Lee, W. K. Kim, A. Wedel, C. Jong Han, and S. K. Park, “Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal-oxide as an electron transport layer”, Japanese Journal of Applied Physics, 54, 2S, (2015)