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Y. H. Kim, J. S. Heo, T. H. Kim, S. J. Park, M. H. Yoon, J. W. Kim, M. S. Oh, G. R. Yi, Y. Y. Noh, and S. K. Park, Flexible metal-oxide devices made by room-temperature photochemical activations of sol-gel films, Nature, 482, 128 (2012)


J. I. Han, Y. H. Kim, and S. K. Park, “Enhanced stability of all solution-processed organic thin-film-transistors using highly conductive modified polymer electrodes”, Jpn. J. Appl. Phys. 45, 482 (2012)


Y. H. Kim, J. E. Anthony, and S. K. Park, “Polymer blended small molecule organic field effect transistors with improved device-to-device uniformity and operational stability”, Organic Electronics, 13, 1152 (2012)


J. I. Han, J. K. Lee, and S. K. Park, “High-performance semitransparent bulk-heterojunction organic solar cells with Ag interfacial layer” Jpn. J. Appl. Phys. 51, 024104 (2012)


Y. H. Kim, J. E. Anthony, B. W. Yoo, and S. K. Park*,  “Controlled deposition of organic single crystal thin film transistor arrays using direct ink-jet printing”, Advanced Materials, 24, 497-502 (2012)


Y. H. Kim, J. I. Han, and S. K. Park* “Effect of Zn/Tin composition ratio on the operational stability of solution-processed zinc tin oxide thin film transistors” IEEE Electron Device. Lett, 33/1, 50 (2012)


S. J. Oh, C. J. Han, J. W. Kim, Y. H. Kim, S. K. Park, J. I. Han, J. W. Kang, and M. S. Oh, “Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment”, Electrochem. Solid-State Lett. 14/9, 354 (2011)


Y. H. Kim and S. K. Park, “Morphology control of inkjet-printed small-molecule organic thin-film transistors with bank structure” Journal of Information Display, 12, 4, 199 (2011)


K. H. Kim, Y. H. Kim, H. J. Kim, J. I. Han, and S. K. Park,  “Fast and Stable Solution-processed Transparent Oxide Thin-Film Transistor Circuits”, IEEE Electron Device. Lett, 32/4, 524 (2011)


Y. H. Kim, H. S. Kim, M. K. Han, J. I. Han, and S. K. Park, “Solvent-mediated threshold voltage shift in zinc-tin-oxide thin-film transistors”, Appl. Phys. Lett. 97/9, 092105 (2010)


Y. H. Kim, M. K. Han, J. I. Han, and S. K. Park, “Highly light-responsive ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene phototransistors with suspended-top-contact structure”, Organic Electronics 11/9, 1529 (2010)


Y. H. Kim, K. H. Kim, M. K. Han, M. S. Oh, H. J. Kim, J. I. Han, and S. K. Park, “Ink-jet printed zinc-tin-oxide thin film transistor circuits with rapid thermal annealing process”, IEEE Electron Device. Lett, 31/8, 836 (2010)


Y. H. Kim, M. K. Han, J. I. Han, and S. K. Park*, Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin film transistors IEEE Trans. Electron Device 10/5, 1009 (2010)


D. A. Mourey. S. K. Park, D. A. Zhao, J. Sun, Y. V. Li, S. Subramanian, S. F. Nelson, D. H. Levy, J. E. Anthony, T. N. Jackson, “Fast, simple ZnO/organic CMOS integrated circuits”, Organic Electronics 10/6 ,1632 (2009)


J. E. Anthony, S. Subramanian, S. R. Parkin, S. K. Park and T. N. Jackson, Thin-film morphology and transistor performance of alkyl-substituted triethylsilylethynyl anthradithiophenes, Journal of Materials Chemistry, 19/42, 7984 (2009)


M. S. Kim, Y. H. Kim, J. W. Kang, J. I. Han, and S. K. Park*, “Glycerol doped poly(3,4-ethylenedioxy-thiophene):poly(styrene sulfonate) buffer layer for improved power conversion in organic photovoltaic devicesJ. Electrochem. Soc. 156/10, H782 (2009)


S. K. Park, Y. H. Kim, and J. I. Han. “Effect of annealing treatment and surface morphology on power conversion in organic photovoltaics Jpn. J. Appl. Phys, 48/7 ,081505 (2009)


S. K. Park, Y. H. Kim, and J. I. Han. “High-resolution patterned nanoparticulate Ag electrodes toward all printed organic thin film transistors” Organic Electronics 10/6 ,1102 (2009)


S. K. Park, Y. H. Kim, and J. I. Han, All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors, J. Phys. D: Appl. Phys., 42/12, 125102 (2009)


S. K. Park, Y. H. Kim, H. S. Kim, and J. I. Han. “High-performance solution-processed and lithographically patterned zinc-tin-oxide thin film transistors with good operational stability”, Electrochem. Solid-State Lett., 12/7, H256 (2009)